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Andrew B. Kahng, Paul Lin, and Dirk Stroobandt |
This is only possible by strictly adhering to certain naming rules. From our experiences with name clashes and after having entered hundreds of parameter names, our naming conventions converged to the following.
Following the notation "<X>" for replacement by a member of X, "[X]" for optional items, and "{X}" for repeated items -- 0 or more times -- (with all other characters mandatory), each parameter name must follow the naming rule:
[<preposition>]_<principal>_{[<qualifier>]_<place>}_{<qualifier>}_[<adverbial>]_[<index>]_[<unit>]
For each of those, the list of allowed literals is presented below,
together with some explanation.
List of preposition literals:
| <preposition> | meaning |
| aux | auxiliary parameter |
| const | fundamental constants |
| delta | delta (difference) |
| k | factor/ratio/selector |
| timeline | timeline (year) |
Auxiliary parameters are used as a temporary, intermediate value and
have no real meaning. The dimensional preposition literal "d" has been
conjugated with its principal literal to form the principal literals "da"
(area), "dl" (length), etc.
List of principal literals:
| <principal> | meaning |
| E | electrical field {V/m} |
| Energy | energy {J} |
| I | current {A} |
| J | current density {A/m^2} |
| MU | mobility {m^2/(V*s)} |
| N | concentration: number of particles/energy states per unit volume {m^(-3)} |
| P | power {W} |
| Z | impedance {ohm} |
| C | capacitance {F} |
| cost | cost {$} or {man-year} |
| dA | area {m^2} |
| depth | depth {m} |
| defect | defects {DIMLESS} |
| df | feature size {m} |
| dh | height {m} |
| dl | length {m} |
| dp | pitch {m} |
| dr | diameter {m} |
| dv | volume {m^3} |
| dspace | space (between) {m} |
| dt | thickness {m} |
| dw | width {m} |
| eps | permittivity {F*s/m^2} |
| f | frequency {Hz} |
| flag | boolean {DIMLESS} |
| g | conductance {mho} |
| growth | amount of growth (bases) {DIMLESS} |
| l | inductance {H} |
| num | number of (drivers, tiers, layers, etc.) {DIMLESS} |
| prob | probability (uses preposition "k") {DIMLESS} |
| q | (electric) charge {C} |
| r | resistance {ohm} |
| rho | resistivity {ohm*m} |
| t | time {s} |
| temp | temperature {K} |
| u | permeability {H/m} |
| v | voltage {V} |
| valref | value at referenced year |
| vel | velocity {m/s} |
| year | calendar year |
| yield | yield {DIMLESS} |
| <name> | specific, well-known name (only allowed behind pre-positions "const" and "k") |
| <other> | specific, unique name for auxiliary parameter (only allowed behind pre-position "aux") |
The literal <name> can be any collection of letters but it is supposed to make sense. Principal literals that are not in the list can only be recognized as a <name> behind the prepositions "const" and "k". The literal <other> can be any collection of characters but this is only allowed behind the preposition "aux" and is supposed to prevent name clashes between different auxiliary parameters.
List of place literals:
| <place> | meaning |
| 2par | two parallel interconnect lines |
| 3par | three parallel interconnect lines |
| AA | active area |
| FF | flip-flop |
| FO4 | fanout of four |
| IO | input/output |
| M# | metal layer # |
| NAND | NAND gate |
| ambient | ambient |
| asic | application specific integrated circuit |
| bs | bulk to source |
| batt | battery |
| bit | bit |
| bitcell | bit-cell |
| board | board |
| bottom | bottom |
| bulk | bulk |
| c2mos | c^2mos |
| capW | width and cap of drivers |
| carr | carrier |
| cband | conduction band |
| channel | channel |
| chip | chip |
| chippackage | chip to package |
| clk | clock |
| coax | coaxial (cable) |
| contact | contact |
| critpath | critical path |
| cycle | cycle |
| ds | drain to source |
| dev | device |
| dielectric | dielectric |
| diode | diode |
| drain | drain |
| dram | DRAM |
| drive | drive (current) |
| driver | driver |
| driver2int | driver to interconnect |
| elect | electrical |
| fblock | functional block |
| fermi | fermi (potential) |
| fermi2mid | fermi to midgap (potential) |
| fet | field effect transistor |
| fi | fanin |
| fo | fanout |
| g2d | gate to drain |
| gs | gate to source |
| gate | (transistor/mos) gate |
| gnd | ground |
| heatsink | heatsink |
| in | input |
| int | interconnect or metal |
| interLD | inter-layer dielectric |
| interface | interface |
| intraLD | intra-layer dielectric |
| inv | inverter |
| junct | junction |
| latch | latch |
| level | level |
| lcore | logic core |
| lgate | logic gate |
| light | light |
| load2int | load to interconnect |
| layer | layer |
| mask | masks |
| mid | middle |
| memory | memory |
| mpuasic | MPU-asic |
| n | n-type material, electron |
| net | net |
| nfet | NFET or NMOS |
| node | (circuit) node |
| offchip | off-chip |
| onchip | on-chip |
| out | output |
| outer | outer |
| outmid | outer and middle |
| ox | oxide |
| p | p-type material, hole |
| p2n | pMOS to nMOS |
| package | package/packaging |
| pad | pad |
| padball | padball |
| pin | pin |
| pipeline | pipeline |
| plates | plates |
| pfet | PFET or PMOS |
| pt2pt | point to point |
| pulse | pulse |
| pwr | power |
| resist | resist |
| rpt | buffer or repeater |
| sd | source to drain |
| seg | segment |
| semi2ox | semiconductor (polysilicon) to insulator |
| si | silicon |
| sidewall | sidewall |
| signal | signal |
| source | source |
| sram | SRAM |
| ss | surface state (density) |
| stage | stage |
| substrate | substrate |
| supply | supply (voltage) |
| surface | surface |
| top | top |
| tristrip | triplate strip line |
| tunnel | tunneling |
| vband | valence band |
| vdd | vdd power |
| via | via |
| wedge | wedge bond |
List of qualifier literals:
| <qualifier> | meaning |
| AC | AC (current) |
| Cu | Cu (metal) |
| DC | DC (current) |
| above | above |
| acceptor | acceptor |
| active | active/activity/activation |
| aggr | aggressor (net) |
| array | array |
| aspect | aspect ratio |
| avail | available |
| avg | average |
| below | below |
| bound | bound |
| blockage | blockage |
| cluster | cluster(ed) |
| complex | complex |
| const | constant |
| couple | coupling |
| crit | critical |
| cumul | cumulative (distribution model) |
| degrad | degradation |
| delay | delay |
| depl | depletion |
| dens | density (distribution) |
| design | design (of the circuit/chip/system) |
| diff | diffusion |
| dom | domino logic family |
| donor | donor |
| drawn | drawn (e.g., drawn channel length) |
| dyn | dynamic |
| eff | effective |
| effi | efficiency |
| equiv | equivalent |
| exp | exponent(ial) |
| ext | external |
| fail | failure |
| first | first |
| field | field |
| fit | fit |
| footprint | footprint |
| fringe | fringe/fringing |
| fudge | adjustment, tune |
| full | full |
| func | (work) function (eV) |
| gain | gain |
| global | global |
| half | half |
| heal | healing |
| high | high |
| hist | historical |
| intrinsic | intrinsic |
| ideal | ideal |
| internal | internal |
| interval | interval |
| intlimited | interconnect limited |
| intro | at introduction (low volume) |
| inversion | inversion |
| lateral | lateral |
| last | last |
| leak | leakage |
| level | level |
| linear | linear |
| local | local |
| location | location |
| logic | logic |
| longest | longest |
| lossless | lossless |
| many | man years |
| max | maximum |
| median | median |
| min | minimum |
| minnum | minimum number of |
| mut | mutual |
| new | new (logic) |
| nom | nominal |
| nonprech | non pre-charged |
| noovh | no overhead |
| norm | normalized |
| off | off |
| on | on (resistance) |
| open | open circuit |
| opt | optimum/optimal |
| overdrive | overdrive |
| overlap | overlap |
| overshoot | overshoot |
| ovh | overhead |
| par | parallel |
| parasitic | parasitic |
| path | path |
| peak | peak |
| penalty | penalty |
| pentode | pentode (region) |
| periph | peripheral |
| physical | physical |
| prech | pre-charged |
| prime | prime (') |
| prod | productivity (in transistors/man-yr), or in production (high volume) |
| read | read (memory) |
| relax | relaxed/unstressed |
| required | required |
| resrc | resource in man-yr/transistors |
| reuse | re-use (logic) |
| rise | rise (time) |
| safety | safety (factor) |
| sat | saturation |
| self | self |
| setup | setup |
| sheet | sheet (resistance) |
| shield | shielding |
| short | short circuit |
| single | single (line) |
| skew | skew |
| slew | slew |
| slope | slope |
| spec | specific |
| stat | static |
| stat2dyn | static to dynamic |
| subth | sub-threshold |
| swing | swing (voltage) |
| system | system |
| taper | tapering (factor) |
| tech | technology |
| th | threshold |
| therm | thermal |
| tnode | technology node |
| tool | design (EDA) tools |
| tot | total |
| trans | transition |
| trend | trend |
| triode | triode (region) |
| typ | typical/characterized |
| up | up |
| util | utilization |
| used | used |
| victim | victim net |
| xchip | across chip |
| xtalk | crosstalk |
| withovh | with overhead |
| write | write (memory) |
List of adverbial literals:
| <adverbial> | meaning |
| 1gnd | (assuming) one ground plane |
| 2gnd | (assuming) two ground planes |
| 300K | at 300 degrees Kelvin |
| 50pct | 50 percent |
| 90pct | 90 percent |
| DIBL | drain-induced barrier lowering effect |
| EM | (due to) electromigration |
| HH | (output) high to high transition (remains high) |
| HL | (output) high to low transition |
| LH | (output) low to high transition |
| LL | (output) low to low transition (remains low) |
| afactor | a constant used to calculate v_ds_sat |
| bfactor | a constant used to calculate v_ds_sat |
| bias | bias |
| Boltzmann | Boltzmann's constant |
| carrlimited | carrier size limited |
| clm | channel length modulation |
| cp | cost performance |
| cvsl | cascode voltage switch logic |
| dd | (due to) drift diffusion |
| delay | (because of) delay |
| early | Early (voltage) |
| hf | high field effect |
| hfsp | high frequency signal pin |
| hce | (under) hot carrier effect |
| hp | high performance |
| lc | low cost |
| Miller | (including) Miller effect |
| model | (using a/the) model |
| mpu | MPU |
| Rent | Rent's rule |
| skineffect | (with) skin effect |
| SPICE | SPICE related |
| te | (under) thermionic emission |
| tspc | true single phase clock |
| wiring | (for the) wiring |
List of unit literals:
| <unit> | meaning |
| pu_dA | per unit area |
| pu_dl | per unit length |
| pu_dp | per unit gate pitch |
| udp | in units of gate pitch |
| uchip | in units of number of chips |
The literal "pu" is never used alone. It should always be followed by
a dimensional principal literal and is viewed together with this dimensional
literal as a single literal.
The "from-to" relationship is indicated by a numeric "2" inserted between
two literals (or two letters when their meanings are clear from the context).
E.g. k_ratio_w2l_nmos_min refers to the minimum ratio of channel
width over drawn channel length of a nmos for a target technology and dl_int_pt2pt_avg
is the average point-to-point interconnect length.
For the cycle-time models we have adopted the convention to change "RULE_"
by the name of the model (e.g., "BACPAC_") to prevent name clashes for
separate models. This convention is likely to change in the future but
made automatic conversion of an old format to the engine grammar for rules
easier.